Transphorm

- Transphorm ist ein globales Halbleiterunternehmen, das Galliumnitrid(GaN)-FETs für Hochspannungswandlungsanwendungen entwickelt. Basierend auf einem branchenführenden IP-Portfolio und mehr als 300 Jahren kombinierter GaN-Entwicklungserfahrung bietet Transphorm die leistungsfähigsten und zuverlässigsten GaN-Komponenten und eine erstklassige Anwendungsdesignunterstützung für seinen wachsenden Kundenstamm. Transphorm schafft Innovationen, die über die Grenzen des Siliziums hinausgehen, um 90 % der heutigen Energieverluste zu erfassen.

Customer Use Cases

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Meet some of the Revolutionaries inspired to create innovative systems using Transphorm GaN. Learn More

Design Guides

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Design guides using High performing and reliable GaN Technology. Learn More

Education

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Learn about the wide-bandgap semiconductor material that achieves performance never before possible. Learn More

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Newest Products Alle anzeigen (60)

Printed Circuit Board Layout and Probing for GaN Power Switches Publish Date: 0001-01-01

This document describes best practices for printed circuit board layout and probing of Transphorm GaN Power Switches.

Lead Free 2nd Level Soldering Recommendations for Vapor Phase Reflow Publish Date: 0001-01-01

Trasphorm’s PQFN package incorporates a DPC substrate and a Cu lead frame encapsulated in a green molding compound.

Characteristics of Transphorm GaN Power Switches Publish Date: 0001-01-01

The ability of the GaN Power Switch to operate in three quadrants with a low reverse recovery charge allows superior performance in comparison to existing technology

Transphorm Publish Date: 2016-10-14

Transphorm ist ein globales Halbleiterunternehmen, das Galliumnitrid(GaN)-FETs für Hochspannungswandlungsanwendungen entwickelt.

Die integrierten GaN-FETs von Transphorm sind ab sofort globale über Digi-Key erhältlich Publish Date: 2016-12-15

Die Galliumnitrid(GaN)-FETs von Transphorm in durchkontaktierbaren TO-xxx-Standardgehäusen und PQFN88-Gehäusen zur Oberflächenmontage sind ab sofort über Digi-Key Electronics, einem weltweiten Distributor von Elektronikbauteilen, im Rahmen einer neuen weltweiten Vertriebsvereinbarung lieferbar.

Drain Voltage and Avalanche Ratings for GaN FETs Publish Date: 2017-01-13

This application note compares a silicon MOSFET’s avalanche rating and Transphorm’s GaN FET transient drain-to-source (“VTDS”) rating.

Recent PTMs Alle anzeigen (60)

Printed Circuit Board Layout and Probing for GaN Power Switches Publish Date: 0001-01-01

This document describes best practices for printed circuit board layout and probing of Transphorm GaN Power Switches.

Lead Free 2nd Level Soldering Recommendations for Vapor Phase Reflow Publish Date: 0001-01-01

Trasphorm’s PQFN package incorporates a DPC substrate and a Cu lead frame encapsulated in a green molding compound.

Characteristics of Transphorm GaN Power Switches Publish Date: 0001-01-01

The ability of the GaN Power Switch to operate in three quadrants with a low reverse recovery charge allows superior performance in comparison to existing technology

Transphorm Publish Date: 2016-10-14

Transphorm ist ein globales Halbleiterunternehmen, das Galliumnitrid(GaN)-FETs für Hochspannungswandlungsanwendungen entwickelt.

Featured Videos Alle anzeigen (10)

Transform talks latest developments in GaN technology

In this episode of PSDtv Primit Parikh, co-founder of Transform, talks to Alix Paultre about the latest developments in GaN technology at APEC 2016.

Welcome to the GaN Revolution!

Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications.

GaN HEMT Evaluation Board TDPS250E2D2

GaN HEMT loading demonstration board TDPS250E2D2 operation demo introduction video.

Transphorm GaN FET Technology Performance Final Ver 1 2

Discusses the differences between Transphorm's GaN FET and today's e mode technology

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