SI2335DS-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

SI2335DS-T1-GE3 is Obsolete and no longer manufactured.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2335DS-T1-GE3
DigiKey Part Number	SI2335DS-T1-GE3-ND - Tape & Reel (TR)
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2335DS-T1-GE3
Description	MOSFET P-CH 12V 3.2A SOT23-3
Customer Reference
Detailed Description	P-Channel 12 V 3.2A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	51mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1225 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2335