STB11NM60-1 is Obsolete and no longer manufactured.
Available Substitutes:

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STMicroelectronics
In Stock: 0
Unit Price: 0,77615 €
Datasheet

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onsemi
In Stock: 2.911
Unit Price: 3,37000 €
Datasheet
N-Channel 650 V 11A (Tc) 160W (Tc) Through Hole I2PAK
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB11NM60-1

DigiKey Part Number
497-5379-5-ND
Manufacturer
Manufacturer Product Number
STB11NM60-1
Description
MOSFET N-CH 650V 11A I2PAK
Customer Reference
Detailed Description
N-Channel 650 V 11A (Tc) 160W (Tc) Through Hole I2PAK
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 25 V
Part Status
Obsolete
Power Dissipation (Max)
160W (Tc)
FET Type
Operating Temperature
-65°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
I2PAK
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
450mOhm @ 5.5A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STI13NM60NSTMicroelectronics0497-STI13NM60N-ND0,77615 €Similar
FCI7N60onsemi2.911FCI7N60-ND3,37000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes