11A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
MOSFET N-CH 60V 11A TO252AA
onsemi
20.400
In Stock
1 : 1,09000 €
Cut Tape (CT)
2.500 : 0,25971 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
11A (Tc)
5V
107mOhm @ 8A, 5V
3V @ 250µA
11.3 nC @ 10 V
±16V
350 pF @ 25 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-PowerVDFN
MOSFET N-CH 30V 11A POWERFLAT
STMicroelectronics
1.714
In Stock
1 : 1,29000 €
Cut Tape (CT)
3.000 : 0,33739 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
30 V
11A (Tc)
4.5V, 10V
7.5mOhm @ 5.5A, 10V
1V @ 250µA (Min)
17 nC @ 4.5 V
±20V
1690 pF @ 24 V
-
2W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
TO-252AA (DPAK)
MOSFET P-CH 55V 11A DPAK
Infineon Technologies
58.575
In Stock
1 : 1,39000 €
Cut Tape (CT)
2.000 : 0,37431 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
11A (Tc)
10V
175mOhm @ 6.6A, 10V
4V @ 250µA
19 nC @ 10 V
±20V
350 pF @ 25 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
22.001
In Stock
1 : 1,42000 €
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
11A (Tc)
4.5V, 10V
90mOhm @ 6A, 10V
2.5V @ 250µA
9.3 nC @ 10 V
±20V
500 pF @ 15 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-251 (IPAK)
TO-251-3 Stub Leads, IPAK
TO-252AA
MOSFET N-CH 60V 11A DPAK
onsemi
21.274
In Stock
1 : 1,03000 €
Cut Tape (CT)
2.500 : 0,24560 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
11A (Tc)
5V, 10V
115mOhm @ 5.5A, 10V
2.5V @ 250µA
6.4 nC @ 5 V
±20V
350 pF @ 25 V
-
2.5W (Ta), 28W (Tc)
-55°C ~ 155°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA (DPAK)
MOSFET P-CH 55V 11A DPAK
Infineon Technologies
9.444
In Stock
1 : 1,39000 €
Cut Tape (CT)
3.000 : 0,35671 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
11A (Tc)
10V
175mOhm @ 6.6A, 10V
4V @ 250µA
19 nC @ 10 V
±20V
350 pF @ 25 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
MOSFET N-CH 600V 11A DPAK
STMicroelectronics
5.693
In Stock
1 : 1,58000 €
Cut Tape (CT)
2.500 : 0,43616 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
4V @ 250µA
17 nC @ 10 V
±25V
580 pF @ 100 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
MOSFET N-CH 500V 11A DPAK
STMicroelectronics
2.431
In Stock
1 : 2,14000 €
Cut Tape (CT)
2.500 : 0,62421 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
11A (Tc)
10V
350mOhm @ 5.5A, 10V
5V @ 250µA
16 nC @ 10 V
±25V
628 pF @ 100 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAK (TO-251AA)
MOSFET P-CH 55V 11A IPAK
Infineon Technologies
6.325
In Stock
1 : 2,26000 €
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
11A (Tc)
10V
175mOhm @ 6.6A, 10V
4V @ 250µA
19 nC @ 10 V
±20V
350 pF @ 25 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220FP
MOSFET N-CH 600V 11A TO220FP
STMicroelectronics
1.662
In Stock
1 : 2,33000 €
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
4V @ 250µA
17 nC @ 10 V
±25V
580 pF @ 100 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-220FP
MOSFET N-CH 650V 11A TO220FP
STMicroelectronics
969
In Stock
1 : 2,40000 €
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
360mOhm @ 5.5A, 10V
4V @ 250µA
19.5 nC @ 10 V
±25V
718 pF @ 100 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-263-3
MOSFET P-CH 60V 11A D2PAK
Vishay Siliconix
1.080
In Stock
1 : 2,68000 €
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
11A (Tc)
10V
280mOhm @ 6.6A, 10V
4V @ 250µA
19 nC @ 10 V
±20V
570 pF @ 25 V
-
3.7W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-252-3, DPAK (2 Leads + Tab), SC-63
MOSFET N-CH 800V 11A TO252
Infineon Technologies
8.704
In Stock
1 : 2,69000 €
Cut Tape (CT)
2.500 : 0,79341 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
11A (Tc)
10V
450mOhm @ 4.5A, 10V
3.5V @ 220µA
24 nC @ 10 V
±20V
770 pF @ 500 V
-
73W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-2
TO-252-3, DPAK (2 Leads + Tab), SC-63
4.880
In Stock
1 : 2,91000 €
Cut Tape (CT)
2.500 : 0,89825 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
399mOhm @ 3.8A, 10V
4.1V @ 250µA
11 nC @ 10 V
±30V
545 pF @ 100 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
MOSFET N-CH 650V 11A TO252-3
Infineon Technologies
26.963
In Stock
1 : 3,13000 €
Cut Tape (CT)
2.500 : 0,94939 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
225mOhm @ 4.8A, 10V
4V @ 240µA
20 nC @ 10 V
±20V
996 pF @ 400 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
MOSFET N-CH 600V 11A DPAK
STMicroelectronics
3.402
In Stock
1 : 3,34000 €
Cut Tape (CT)
2.500 : 1,05937 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
360mOhm @ 5.5A, 10V
4V @ 250µA
30 nC @ 10 V
±25V
790 pF @ 50 V
-
90W (Tc)
150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
8 PowerDIP
100V MVSOA IN PQFN56 PACKAGE
onsemi
2.030
In Stock
1 : 3,41000 €
Cut Tape (CT)
3.000 : 1,04989 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
11A (Tc)
10V
10.8mOhm @ 31A, 10V
4V @ 164µA
58.5 nC @ 10 V
±20V
3950 pF @ 50 V
-
3W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
PG-TO220-3-1
MOSFET N-CH 650V 11A TO220-3
Infineon Technologies
2.008
In Stock
1 : 3,65000 €
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
380mOhm @ 7A, 10V
3.9V @ 500µA
60 nC @ 10 V
±20V
1200 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
PG-TO263-3
AUTOMOTIVE_COOLMOS PG-TO263-3
Infineon Technologies
466
In Stock
1 : 3,83000 €
Cut Tape (CT)
1.000 : 1,32150 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
230mOhm @ 5.2A, 10V
4.5V @ 260µA
23 nC @ 10 V
±20V
1044 pF @ 400 V
-
63W (Tc)
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO220-3-1
MOSFET N-CH 800V 11A TO220-3
Infineon Technologies
2.790
In Stock
1 : 3,86000 €
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
800 V
11A (Tc)
10V
450mOhm @ 7.1A, 10V
3.9V @ 680µA
85 nC @ 10 V
±20V
1600 pF @ 100 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
TO-263
MOSFET N-CH 600V 11A D2PAK
onsemi
1.788
In Stock
1 : 4,19000 €
Cut Tape (CT)
800 : 1,43840 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
5V @ 250µA
52 nC @ 10 V
±30V
1490 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IHW15N120R3FKSA1
MOSFET N-CH 800V 11A TO247-3
Infineon Technologies
518
In Stock
1 : 4,22000 €
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
800 V
11A (Tc)
10V
450mOhm @ 7.1A, 10V
3.9V @ 680µA
85 nC @ 10 V
±20V
1600 pF @ 100 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
PG-TO263-3-2
MOSFET N-CH 650V 11A TO263-3
Infineon Technologies
8.595
In Stock
1 : 4,48000 €
Cut Tape (CT)
1.000 : 1,58614 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
380mOhm @ 7A, 10V
3.9V @ 500µA
60 nC @ 10 V
±20V
1200 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220FP
MOSFET N-CH 600V 11A TO220FP
STMicroelectronics
759
In Stock
1 : 4,72000 €
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
360mOhm @ 5.5A, 10V
4V @ 250µA
30 nC @ 10 V
±25V
790 pF @ 50 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
PG-TO220-FP
MOSFET N-CH 600V 11A TO220
Infineon Technologies
1.660
In Stock
1 : 5,11000 €
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
120mOhm @ 7.8A, 10V
4V @ 390µA
34 nC @ 10 V
±20V
1500 pF @ 400 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
Showing
of 406

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.