Bipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Through Hole IPAK
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD253-1G

DigiKey Part Number
MJD253-1GOS-ND
Manufacturer
Manufacturer Product Number
MJD253-1G
Description
TRANS PNP 100V 4A IPAK
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Through Hole IPAK
Datasheet
 Datasheet
Product Attributes
Filter Similar Products
Show Empty Attributes
Category
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA, 1V
Mfr
Power - Max
1.4 W
Packaging
Tube
Frequency - Transition
40MHz
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
4 A
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Voltage - Collector Emitter Breakdown (Max)
100 V
Supplier Device Package
IPAK
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Base Product Number
Current - Collector Cutoff (Max)
100nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
MJD253T4Gonsemi12.646MJD253T4GOSCT-ND0,77000 €MFR Recommended
In-Stock: 207
Check for Additional Incoming Stock
This product is no longer manufactured and will no longer be stocked once stock is depleted. View Substitutes
All prices are in EUR
Tube
QuantityUnit PriceExt Price
11,03000 €1,03 €
750,44253 €33,19 €
1500,39360 €59,04 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1,03000 €
Unit Price with VAT:1,22570 €