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SiC Gate Drivers
onsemi
This presentation will introduce onsemi's NCP51561 5 kV isolation silicon carbide, silicon junction MOSFET gate driver. It will discuss turning on and off a silicon junction MOSFET versus a silicon carbide MOSFET. Gate driver undervoltage lockout will be explained relative to the Miller plateau region of both silicon junction and silicon carbide MOSFETs. It will also explain the benefits of the NCP51561 negative bias driving silicon carbide MOSFETs during turn off. Finally, this module will explore a first-order approximation for gate drive strength calculation for the NTH4L022N120M3S 1200 V, 22 mΩ silicon carbide MOSFET.
Related Parts
| Abbildung | Hersteller-Teilenummer | Beschreibung | Verfügbare Menge | Preis | Details anzeigen | |
|---|---|---|---|---|---|---|
 |  | NCP51561DADWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 258 - Sofort 16000 - Lagerbestand des Herstellers | $3.17 | Details anzeigen |
| | NCP51561BADWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 638 - Sofort | $3.17 | Details anzeigen |
| | NCP51561BBDWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 336 - Sofort | $3.17 | Details anzeigen |
| | NCP51561DBDWR2G | DGTL ISO 5KV 2CH GATE DVR 16SOIC | 767 - Sofort 2000 - Lagerbestand des Herstellers | $3.17 | Details anzeigen |
|  | NTH4L022N120M3S | SIC MOS TO247-4L 22MOHM 1200V | 1425 - Sofort 29700 - Lagerbestand des Herstellers | $16.76 | Details anzeigen |
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