Name: SIHB22N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB22N60EF-GE3-ND
Price: 4.6291 EUR
Availability: OutOfStock

SIHB22N60EF-GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Similar

STMicroelectronics

In Stock: 0

Unit Price: 1,57996 €

Similar

Taiwan Semiconductor Corporation

In Stock: 0

Unit Price: 1,70059 €

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHB22N60EF-GE3
DigiKey Part Number	SIHB22N60EF-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB22N60EF-GE3
Description	MOSFET N-CH 600V 19A D2PAK
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 19A (Tc) 179W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	EF
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	182mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1423 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	SIHB22