Name: TK125A60Z1,S4X
Brand: Toshiba Semiconductor and Storage
SKU: 264-TK125A60Z1S4X-ND
Price: 3.7842 EUR
Availability: OutOfStock

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N-Channel 600 V 20A (Ta) 40W (Tc) Through Hole TO-220SIS

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TK125A60Z1,S4X
DigiKey Part Number	264-TK125A60Z1S4X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK125A60Z1,S4X
Description	N-CH MOSFET, 600 V, 0.125 @10V,
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 20A (Ta) 40W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 730µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack