STP14NM65N is Obsolete and no longer manufactured.
Available Substitutes:

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Vishay Siliconix
In Stock: 0
Unit Price: 2,63000 €
Datasheet

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Toshiba Semiconductor and Storage
In Stock: 34
Unit Price: 4,33000 €
Datasheet
N-Channel 650 V 12A (Tc) 125W (Tc) Through Hole TO-220
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP14NM65N

DigiKey Part Number
497-7024-5-ND
Manufacturer
Manufacturer Product Number
STP14NM65N
Description
MOSFET N-CH 650V 12A TO220AB
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 125W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Series
Vgs (Max)
±25V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 50 V
Part Status
Obsolete
Power Dissipation (Max)
125W (Tc)
FET Type
Operating Temperature
150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-220
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
SIHP12N65E-GE3Vishay Siliconix0SIHP12N65E-GE3-ND2,63000 €Similar
TK10E60W,S1VXToshiba Semiconductor and Storage34TK10E60WS1VX-ND4,33000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes