Name: STD1HN60K3
Brand: STMicroelectronics
SKU: 497-STD1HN60K3TR-ND
Price: 1.6541 EUR
Availability: OutOfStock

STD1HN60K3 is out of stock and can be placed on backorder.

Available Substitutes:

Similar

Vishay Siliconix

In Stock: 2.918

Unit Price: 1,14000 €

Similar

Vishay Siliconix

In Stock: 0

Unit Price: 0,55346 €

Similar

Vishay Siliconix

In Stock: 5.618

Unit Price: 1,48000 €

Similar

Rohm Semiconductor

In Stock: 0

Unit Price: 0,51390 €

Similar

Taiwan Semiconductor Corporation

In Stock: 5.936

Unit Price: 0,77000 €

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD1HN60K3
DigiKey Part Number	497-STD1HN60K3TR-ND - Tape & Reel (TR) 497-STD1HN60K3CT-ND - Cut Tape (CT) 497-STD1HN60K3DKR-ND - Digi-Reel®
Manufacturer	STMicroelectronics
Manufacturer Product Number	STD1HN60K3
Description	MOSFET N-CH 600V 1.2A DPAK
Manufacturer Standard Lead Time	13 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 1.2A (Tc) 27W (Tc) Surface Mount DPAK
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	SuperMESH3™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9.5 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	27W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	STD1HN60