STB11NM60N-1 is Obsolete and no longer manufactured.
Available Substitutes:

Direct


STMicroelectronics
In Stock: 1.322
Unit Price: 4,58000 €
Datasheet

Similar


onsemi
In Stock: 2.911
Unit Price: 3,37000 €
Datasheet
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB11NM60N-1

DigiKey Part Number
STB11NM60N-1-ND
Manufacturer
Manufacturer Product Number
STB11NM60N-1
Description
MOSFET N-CH 600V 10A I2PAK
Customer Reference
Detailed Description
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Series
Vgs (Max)
±25V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 50 V
Part Status
Obsolete
Power Dissipation (Max)
90W (Tc)
FET Type
Operating Temperature
150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
I2PAK
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
450mOhm @ 5A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STP13NM60NSTMicroelectronics1.322497-STP13NM60N-ND4,58000 €Direct
FCI7N60onsemi2.911FCI7N60-ND3,37000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes