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GP3T080A120J

DigiKey Part Number
1560-GP3T080A120J-ND
Manufacturer
SemiQ
Manufacturer Product Number
GP3T080A120J
Description
GEN3 1200V 80M SIC MOSFET TO-263
Manufacturer Standard Lead Time
6 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 33A (Tc) 155W (Tc) Surface Mount TO-263-7L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SemiQ
Series
QSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1351 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
155W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7L
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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In-Stock: 50
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
15,28000 €5,28 €
502,77720 €138,86 €
1002,53540 €253,54 €
5002,11212 €1.056,06 €
1.0001,97621 €1.976,21 €
2.0001,89332 €3.786,64 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5,28000 €
Unit Price with VAT:6,28320 €