33A (Tc) Single FETs, MOSFETs

Showing

of 148

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	25.683 In Stock	1 : 1,50000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFR4615TRLPBF MOSFET N-CH 150V 33A DPAK Infineon Technologies	2.051 In Stock	1 : 1,91000 € Cut Tape (CT) 3.000 : 0,46800 € Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	33A (Tc)	10V	42mOhm @ 21A, 10V	5V @ 100µA	26 nC @ 10 V	±20V	1750 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF540NSTRLPBF MOSFET N-CH 100V 33A D2PAK Infineon Technologies	2.354 In Stock	1 : 1,93000 € Cut Tape (CT) 800 : 0,54880 € Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC360N15NS3GATMA1 MOSFET N-CH 150V 33A 8TDSON Infineon Technologies	3.641 In Stock	1 : 2,24000 € Cut Tape (CT) 5.000 : 0,57308 € Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	33A (Tc)	8V, 10V	36mOhm @ 25A, 10V	4V @ 45µA	15 nC @ 10 V	±20V	1190 pF @ 75 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
FDB33N25TM MOSFET N-CH 250V 33A D2PAK onsemi	12.036 In Stock 96.000 Factory	1 : 2,60000 € Cut Tape (CT) 800 : 0,89409 € Tape & Reel (TR)	UniFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	33A (Tc)	10V	94mOhm @ 16.5A, 10V	5V @ 250µA	48 nC @ 10 V	±30V	2135 pF @ 25 V	-	235W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDPF33N25T MOSFET N-CH 250V 33A TO220F onsemi	9.878 In Stock	1 : 2,74000 € Tube	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	33A (Tc)	10V	94mOhm @ 16.5A, 10V	5V @ 250µA	48 nC @ 10 V	±30V	2135 pF @ 25 V	-	37W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
UJ3C120080K3S SICFET N-CH 1200V 33A TO247-3 onsemi	3.891 In Stock	1 : 16,95000 € Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
DMTH10H032LPSW-13 MOSFET BVDSS: 61V~100V POWERDI50 Diodes Incorporated	2.781 In Stock	1 : 0,84000 € Cut Tape (CT) 2.500 : 0,20390 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	4.5V, 10V	32mOhm @ 5A, 10V	2.5V @ 250µA	11.9 nC @ 10 V	±20V	683 pF @ 50 V	-	3.4W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
BUK9Y21-40E,115 MOSFET N-CH 40V 33A LFPAK56 Nexperia USA Inc.	1.622 In Stock	1 : 0,86000 € Cut Tape (CT) 1.500 : 0,23051 € Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	33A (Tc)	5V	17mOhm @ 10A, 10V	2.1V @ 1mA	7 nC @ 5 V	±10V	824 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK9M28-80EX MOSFET N-CH 80V 33A LFPAK33 Nexperia USA Inc.	144 In Stock	1 : 1,04000 € Cut Tape (CT) 1.500 : 0,28808 € Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	33A (Tc)	5V	25mOhm @ 10A, 10V	2.1V @ 1mA	16.7 nC @ 5 V	±10V	2275 pF @ 25 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
IRFS4615TRLPBF MOSFET N-CH 150V 33A D2PAK Infineon Technologies	430 In Stock	1 : 2,24000 € Cut Tape (CT) 800 : 0,65446 € Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	33A (Tc)	10V	42mOhm @ 21A, 10V	5V @ 100µA	40 nC @ 10 V	±20V	1750 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFP140NPBF MOSFET N-CH 100V 33A TO247AC Infineon Technologies	1.614 In Stock	1 : 2,36000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	52mOhm @ 16A, 10V	4V @ 250µA	94 nC @ 10 V	±20V	1400 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
FDP33N25 MOSFET N-CH 250V 33A TO220-3 onsemi	1.746 In Stock	1 : 2,41000 € Tube	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	33A (Tc)	10V	94mOhm @ 16.5A, 10V	5V @ 250µA	48 nC @ 10 V	±30V	2135 pF @ 25 V	-	235W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
TPW2900ENH,L1Q PB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage	1.880 In Stock	1 : 3,14000 € Cut Tape (CT) 5.000 : 1,03077 € Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	33A (Tc)	10V	29mOhm @ 16.5A, 10V	4V @ 1mA	22 nC @ 10 V	±20V	2200 pF @ 100 V	-	800mW (Ta), 142W (Tc)	150°C	-	-	Surface Mount	8-DSOP Advance	8-PowerVDFN
IPL60R105P7AUMA1 MOSFET N-CH 600V 33A 4VSON Infineon Technologies	6.037 In Stock	1 : 4,24000 € Cut Tape (CT) 3.000 : 1,36173 € Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	33A (Tc)	10V	105mOhm @ 10.5A, 10V	4V @ 530µA	45 nC @ 10 V	±20V	1952 pF @ 400 V	-	137W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-VSON-4	4-PowerTSFN
IPT60R075CFD7XTMA1 MOSFET N-CH 600V 33A 8HSOF Infineon Technologies	2.570 In Stock	1 : 5,27000 € Cut Tape (CT) 2.000 : 1,82446 € Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	33A (Tc)	10V	75mOhm @ 11.4A, 10V	4.5V @ 570µA	51 nC @ 10 V	±20V	2103 pF @ 400 V	-	188W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2	8-PowerSFN
IPL60R075CFD7AUMA1 MOSFET N-CH 600V 33A 4VSON Infineon Technologies	1.348 In Stock	1 : 5,45000 € Cut Tape (CT) 3.000 : 1,90623 € Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	33A (Tc)	10V	75mOhm @ 15.1A, 10V	4.5V @ 760µA	67 nC @ 10 V	±20V	2721 pF @ 400 V	-	189W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-VSON-4	4-PowerTSFN
SIHB33N60E-GE3 MOSFET N-CH 600V 33A D2PAK Vishay Siliconix	1.788 In Stock	1 : 5,84000 € Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	33A (Tc)	10V	99mOhm @ 16.5A, 10V	4V @ 250µA	150 nC @ 10 V	±30V	3508 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP65R065C7XKSA1 MOSFET N-CH 650V 33A TO220-3 Infineon Technologies	486 In Stock	1 : 6,17000 € Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	65mOhm @ 17.1A, 10V	4V @ 850µA	64 nC @ 10 V	±20V	3020 pF @ 400 V	-	171W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPW65R065C7XKSA1 MOSFET N-CH 650V 33A TO247-3 Infineon Technologies	203 In Stock	1 : 6,70000 € Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	65mOhm @ 17.1A, 10V	4V @ 850µA	64 nC @ 10 V	±20V	3020 pF @ 400 V	-	171W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPB65R065C7ATMA2 MOSFET N-CH 650V 33A TO263-3 Infineon Technologies	2.430 In Stock	1 : 7,42000 € Cut Tape (CT) 1.000 : 2,87760 € Tape & Reel (TR)	CoolMOS™ C7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	65mOhm @ 17.1A, 10V	4.5V @ 200µA	64 nC @ 10 V	±20V	3020 pF @ 400 V	-	171W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STB42N65M5 MOSFET N-CH 650V 33A D2PAK STMicroelectronics	2.000 In Stock	1 : 10,38000 € Cut Tape (CT) 1.000 : 5,06491 € Tape & Reel (TR)	MDmesh™ V	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	79mOhm @ 16.5A, 10V	5V @ 250µA	100 nC @ 10 V	±25V	4650 pF @ 100 V	-	190W (Tc)	150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCTW40N120G2VAG SICFET N-CH 1200V 33A HIP247 STMicroelectronics	332 In Stock	1 : 14,73000 € Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	33A (Tc)	18V	105mOhm @ 20A, 18V	5V @ 1mA	63 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	290W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™	TO-247-3
SIRA18DP-T1-GE3 MOSFET N-CH 30V 33A PPAK SO-8 Vishay Siliconix	3.520 In Stock	1 : 0,86000 € Cut Tape (CT) 3.000 : 0,20973 € Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	33A (Tc)	4.5V, 10V	7.5mOhm @ 10A, 10V	2.4V @ 250µA	21.5 nC @ 10 V	+20V, -16V	1000 pF @ 15 V	-	3.3W (Ta), 14.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SI4456DY-T1-E3 MOSFET N-CH 40V 33A 8SO Vishay Siliconix	272 In Stock	1 : 2,99000 € Cut Tape (CT) 2.500 : 0,96334 € Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	33A (Tc)	4.5V, 10V	3.8mOhm @ 20A, 10V	2.8V @ 250µA	122 nC @ 10 V	±20V	5670 pF @ 20 V	-	3.5W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

Showing

of 148

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

INFORMATION

HELP

CONTACT US

FOLLOW US