IPI032N06N3GAKSA1 Infineon Technologies | Single FETs, MOSFETs

IPI032N06N3GAKSA1 is out of stock and backorders are currently unavailable.

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Rochester Electronics, LLC

In Stock: 871

Unit Price: 1,53351 €

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IPI032N06N3GAKSA1
DigiKey Part Number	IPI032N06N3GAKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI032N06N3GAKSA1
Description	MOSFET N-CH 60V 120A TO262-3
Customer Reference
Detailed Description	N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
Datasheet	Datasheet
EDA/CAD Models	IPI032N06N3GAKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 118µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V
Part Status Discontinued at DigiKey	Power Dissipation (Max) 188W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 120A (Tc)	Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPI032
Rds On (Max) @ Id, Vgs 3.2mOhm @ 100A, 10V