FQI4N90TU is Obsolete and no longer manufactured.
Available Substitutes:

Parametric Equivalent


Rochester Electronics, LLC
In Stock: 5.792
Unit Price: 1,06237 €
Datasheet

Parametric Equivalent


Rochester Electronics, LLC
In Stock: 1.302
Unit Price: 1,06237 €
Datasheet
N-Channel 900 V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole TO-262 (I2PAK)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

FQI4N90TU

DigiKey Part Number
FQI4N90TU-ND
Manufacturer
Manufacturer Product Number
FQI4N90TU
Description
MOSFET N-CH 900V 4.2A I2PAK
Customer Reference
Detailed Description
N-Channel 900 V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole TO-262 (I2PAK)
Datasheet
 Datasheet
EDA/CAD Models
FQI4N90TU Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 140W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
Base Product Number
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