Name: MJD112-1G
Brand: onsemi
SKU: MJD112-1GOS-ND
Price: 1.6303 EUR
Availability: InStock

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MJD112-1G
DigiKey Part Number	MJD112-1GOS-ND
Manufacturer	onsemi
Manufacturer Product Number	MJD112-1G
Description	TRANS NPN DARL 100V 2A IPAK
Manufacturer Standard Lead Time	19 Weeks
Customer Reference
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole IPAK
Datasheet	Datasheet
EDA/CAD Models	MJD112-1G Models

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors	DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Mfr onsemi	Power - Max 1.75 W
Packaging Tube	Frequency - Transition 25MHz
Part Status Active	Operating Temperature -65°C ~ 150°C (TJ)
Transistor Type NPN - Darlington	Mounting Type Through Hole
Current - Collector (Ic) (Max) 2 A	Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Voltage - Collector Emitter Breakdown (Max) 100 V	Supplier Device Package IPAK
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A	Base Product Number MJD112
Current - Collector Cutoff (Max) 20µA

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Tube

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Unit Price without VAT:	1,37000 €
Unit Price with VAT:	1,63030 €

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MJD112-1G