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2SB817C-1E is Obsolete and no longer manufactured.
Available Substitutes:
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2SB817C-1E | |
|---|---|
DigiKey Part Number | 2SB817C-1EOS-ND |
Manufacturer | |
Manufacturer Product Number | 2SB817C-1E |
Description | TRANS PNP 140V 12A TO-3P-3L |
Customer Reference | |
Detailed Description | Bipolar (BJT) Transistor PNP 140 V 12 A 10MHz 120 W Through Hole TO-3P-3L |
Datasheet | Datasheet |
EDA/CAD Models | 2SB817C-1E Models |
Product Attributes
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Category | DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V |
Mfr | Power - Max 120 W |
Packaging Tube | Frequency - Transition 10MHz |
Part Status Obsolete | Operating Temperature 150°C (TJ) |
Transistor Type | Mounting Type Through Hole |
Current - Collector (Ic) (Max) 12 A | Package / Case TO-3P-3, SC-65-3 |
Voltage - Collector Emitter Breakdown (Max) 140 V | Supplier Device Package TO-3P-3L |
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A | Base Product Number |
Current - Collector Cutoff (Max) 100µA (ICBO) |
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Substitutes (3)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| 2SA1303 | Sanken Electric USA Inc. | 0 | 2SA1303-ND | 1,70150 € | Similar |
| 2SA1386 | Sanken Electric USA Inc. | 0 | 2SA1386-ND | 2,25122 € | Similar |
| 2SA1941-O(Q) | Toshiba Semiconductor and Storage | 68 | 2SA1941-O(Q)-ND | 3,18000 € | Similar |
Obsolete
