2SA2169-E is Obsolete and no longer manufactured.
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Nexperia USA Inc.
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Unit Price: 0,96000 €
Datasheet
Bipolar (BJT) Transistor PNP 50 V 10 A 130MHz 950 mW Through Hole TP
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2SA2169-E

DigiKey Part Number
2SA2169-EOS-ND
Manufacturer
Manufacturer Product Number
2SA2169-E
Description
TRANS PNP 50V 10A TP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 10 A 130MHz 950 mW Through Hole TP
Datasheet
 Datasheet
EDA/CAD Models
2SA2169-E Models
Product Attributes
Type
Description
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Category
Mfr
Series
-
Packaging
Bulk
Part Status
Obsolete
Transistor Type
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
580mV @ 250mA, 5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
950 mW
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package
TP
Base Product Number
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