N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
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IPAN65R650CEXKSA1

DigiKey Part Number
IPAN65R650CEXKSA1-ND
Manufacturer
Manufacturer Product Number
IPAN65R650CEXKSA1
Description
MOSFET N-CH 650V 10.1A TO220
Customer Reference
Detailed Description
N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Datasheet
 Datasheet
EDA/CAD Models
IPAN65R650CEXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 210µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
Part Status
Last Time Buy
Power Dissipation (Max)
28W (Tc)
FET Type
Operating Temperature
-40°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-FP
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (5)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IPAN70R600P7SXKSA1Infineon Technologies500IPAN70R600P7SXKSA1-ND1,35000 €MFR Recommended
FCPF850N80Zonsemi778FCPF850N80Z-ND3,37000 €Similar
IXTP4N70X2MIXYS24238-IXTP4N70X2M-ND3,90000 €Similar
STF10LN80K5STMicroelectronics183497-16499-5-ND3,39000 €Similar
STP10NK70ZFPSTMicroelectronics952497-12602-5-ND4,67000 €Similar
In-Stock: 14
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Once available stock of this product has been depleted, manufacturer standard package and lead time will apply. View Substitutes
Last Time Buy Date: 30.09.2026
All prices are in EUR
Tube
QuantityUnit PriceExt Price
11,42000 €1,42 €
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1,42000 €
Unit Price with VAT:1,68980 €