Name: IMZA65R039M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMZA65R039M1HXKSA1-ND
Price: 13.1614 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMZA65R039M1HXKSA1
DigiKey Part Number	448-IMZA65R039M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMZA65R039M1HXKSA1
Description	SILICON CARBIDE MOSFET, PG-TO247
Customer Reference
Detailed Description	N-Channel 650 V 50A (Tc) 176W (Tc) Through Hole PG-TO247-4-3
Datasheet	Datasheet
EDA/CAD Models	IMZA65R039M1HXKSA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.7V @ 7.5mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
Packaging Tube	Vgs (Max) +20V, -2V
Part Status Not For New Designs	Input Capacitance (Ciss) (Max) @ Vds 1393 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 176W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 50A (Tc)	Supplier Device Package PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4