N-Channel 650 V 11A (Tc) 192W (Tc) Through Hole TO-220
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GC11N65T

DigiKey Part Number
3141-GC11N65T-ND
Manufacturer
Goford Semiconductor
Manufacturer Product Number
GC11N65T
Description
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 11A (Tc) 192W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Goford Semiconductor
Series
SuperJunction
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
901 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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In-Stock: 98
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
12,80000 €2,80 €
501,39420 €69,71 €
1001,25770 €125,77 €
5001,01856 €509,28 €
1.0000,94170 €941,70 €
2.0000,87710 €1.754,20 €
5.0000,80724 €4.036,20 €
10.0000,80634 €8.063,40 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2,80000 €
Unit Price with VAT:3,33200 €