Diode 650 V 9.4A Through Hole TO-257
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1N8034-GA

DigiKey Part Number
1913-1N8034-GA-ND
Manufacturer
Navitas Semiconductor, Inc.
Manufacturer Product Number
1N8034-GA
Description
DIODE SIL CARB 650V 9.4A TO257
Customer Reference
Detailed Description
Diode 650 V 9.4A Through Hole TO-257
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Navitas Semiconductor, Inc.
Series
-
Packaging
Tube
Part Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
9.4A
Voltage - Forward (Vf) (Max) @ If
1.34 V @ 10 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
5 µA @ 650 V
Capacitance @ Vr, F
1107pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-257-3
Supplier Device Package
TO-257
Operating Temperature - Junction
-55°C ~ 250°C
Base Product Number
1N8034
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Obsolete
This product is no longer manufactured.