SiC (Silicon Carbide) Schottky Single Diodes

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Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DO-214AA, SMB
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GeneSiC Semiconductor
30.779
In Stock
1 : 1,41000 €
Cut Tape (CT)
3.000 : 0,87234 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
1A
2 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 6.5 V
76pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
IDM02G120C5XTMA1
DIODE SIL CARB 1200V 2A PGTO2522
Infineon Technologies
31.092
In Stock
1 : 2,09000 €
Cut Tape (CT)
2.500 : 0,61307 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.65 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
18 µA @ 1200 V
182pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D02120E-TR
DIODE SIL CARB 1200V 10A TO2522
Wolfspeed, Inc.
20.792
In Stock
1 : 2,57000 €
Cut Tape (CT)
2.500 : 0,77795 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
167pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D02120E
DIODE SIL CARB 1200V 10A TO2522
Wolfspeed, Inc.
7.325
In Stock
1 : 2,57000 €
Tube
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SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
167pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
DPAK
STPSC2H12B2Y-TR
DIODE SIL CARBIDE 1200V 5A DPAK
STMicroelectronics
14.074
In Stock
1 : 2,73000 €
Cut Tape (CT)
2.500 : 0,88072 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
5A
1.5 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
12 µA @ 1200 V
190pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
DO-214AA, SMB
GB02SLT12-214
DIODE SIL CARB 1200V 2A DO214AA
GeneSiC Semiconductor
22.607
In Stock
1 : 2,76000 €
Cut Tape (CT)
3.000 : 1,85697 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
131pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
DPAK
STPSC10H065B-TR
DIODE SIL CARBIDE 650V 10A DPAK
STMicroelectronics
6.013
In Stock
1 : 2,82000 €
Cut Tape (CT)
2.500 : 0,91427 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
10A
1.75 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
GE12MPS06E
GD10MPS12E
DIODE SIL CARB 1200V 29A TO2522
GeneSiC Semiconductor
107
In Stock
1 : 3,07000 €
Cut Tape (CT)
2.500 : 1,98038 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
C3D02060F
C3D06060F
DIODE SIC 600V 11.5A TO220-F2
Wolfspeed, Inc.
3.652
In Stock
1 : 3,21000 €
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SiC (Silicon Carbide) Schottky
600 V
11.5A
1.8 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
294pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2 Full Pack
TO-220-F2
-55°C ~ 175°C
UJ3D06508TS
UJ3D1202TS
DIODE SIL CARBIDE 1200V 2A TO220
onsemi
6.512
In Stock
1 : 3,39000 €
Tube
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Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.6 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
22 µA @ 1200 V
109pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
DPAK
STPSC10H065BY-TR
DIODE SIL CARBIDE 650V 10A DPAK
STMicroelectronics
1.675
In Stock
1 : 3,66000 €
Cut Tape (CT)
2.500 : 1,26816 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
10A
-
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
Automotive
AEC-Q101
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
TO-247-2
GP3D005A170B
DIODE SIL CARB 1700V 21A TO2472
SemiQ
2.126
In Stock
1 : 3,72000 €
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Tube
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SiC (Silicon Carbide) Schottky
1700 V
21A
1.65 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
347pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
IDM10G120C5XTMA1
DIODE SIC 1.2KV 38A PGTO2522
Infineon Technologies
5.737
In Stock
1 : 4,03000 €
Cut Tape (CT)
2.500 : 1,45957 €
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SiC (Silicon Carbide) Schottky
1200 V
38A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
62 µA @ 12 V
29pF @ 800V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 150°C
TO-247-2
GD05MPS17H
DIODE SIL CARB 1700V 15A TO2472
GeneSiC Semiconductor
942
In Stock
1 : 4,54000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
C3D06060G
C3D10060G
DIODE SIL CARB 600V 29A TO263-2
Wolfspeed, Inc.
564
In Stock
1 : 4,68000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D05120E
DIODE SIL CARB 1200V 19A TO2522
Wolfspeed, Inc.
3.516
In Stock
1 : 5,04000 €
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Active
SiC (Silicon Carbide) Schottky
1200 V
19A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
150 µA @ 1200 V
390pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220AC
STPSC10H12D
DIODE SIL CARB 1200V 10A TO220AC
STMicroelectronics
1.232
In Stock
1 : 5,07000 €
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SiC (Silicon Carbide) Schottky
1200 V
10A
1.5 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1200 V
725pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
TO-220-2
IDH12SG60CXKSA2
DIODE SIL CARB 600V 12A PGTO2201
Infineon Technologies
500
In Stock
1 : 5,54000 €
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SiC (Silicon Carbide) Schottky
600 V
12A
2.1 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 600 V
310pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
D2PAK
STPSC20065GY-TR
DIODE SIL CARBIDE 650V 20A D2PAK
STMicroelectronics
1.102
In Stock
1 : 5,61000 €
Cut Tape (CT)
1.000 : 2,53954 €
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SiC (Silicon Carbide) Schottky
650 V
20A
1.45 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
150 µA @ 600 V
1250pF @ 0V, 1MHz
Automotive
AEC-Q101
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
IDH20G65C6XKSA1
IDH20G65C6XKSA1
DIODE SIL CARB 650V 41A PGTO220
Infineon Technologies
1.060
In Stock
1 : 5,98000 €
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SiC (Silicon Carbide) Schottky
650 V
41A
1.35 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
67 µA @ 420 V
970pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
TO-263-3
IDK20G120C5XTMA1
DIODE SIC 1.2KV 56A PGTO26321
Infineon Technologies
1.193
In Stock
1 : 6,40000 €
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1.000 : 3,15933 €
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SiC (Silicon Carbide) Schottky
1200 V
56A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
123 µA @ 1200 V
1050pF @ 1V, 1MHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
TO-220AC
STPSC15H12D
DIODE SIL CARB 1200V 15A TO220AC
STMicroelectronics
1.099
In Stock
1 : 6,76000 €
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SiC (Silicon Carbide) Schottky
1200 V
15A
1.5 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 1200 V
1200pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
TO-220-2
C4D08120A
DIODE SIL CARB 1200V 24.5A TO220
Wolfspeed, Inc.
109
In Stock
1 : 7,15000 €
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SiC (Silicon Carbide) Schottky
1200 V
24.5A
1.8 V @ 7.5 A
No Recovery Time > 500mA (Io)
0 ns
250 µA @ 1200 V
560pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D10120E
DIODE SIL CARB 1200V 33A TO2522
Wolfspeed, Inc.
2.998
In Stock
1 : 8,48000 €
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SiC (Silicon Carbide) Schottky
1200 V
33A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
250 µA @ 1200 V
754pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
C6D25170H
C6D05170H
DIODE SIL CARB 1700V 21A TO2472
Wolfspeed, Inc.
584
In Stock
1 : 9,58000 €
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Tube
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SiC (Silicon Carbide) Schottky
1700 V
21A
1.7 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
9 µA @ 1700 V
638pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
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Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.