GE Aerospace

48 mm High-Power SiC Module Platform

GE Aerospace's silicon carbide (SiC) power modules deliver very low inductance for aviation, military, and industrial applications

Image of GE Aerospace's 48 mm High-Power SiC Module PlatformGE Aerospace's GE12047BCA3, GE12047CCA3, GE17042BCA3, and GE17042CCA3 SiC power modules are electrification solutions enabling higher power density, faster switching, and higher reliability.

The 48 mm platform incorporates power overlay wire bond-free technology to minimize the inductance to as low as 2 nH. The RTD sensor is located directly above the SiC die, giving the user accurate and timely control for optimal performance.

Features
  • Half-bridge or dual (two-switch) topology
  • Voltage levels available: 1,200 V and 1,700 V
  • Continuous drain current: up to 475 A (max.)
  • Very low inductance: 2 nH (dual) and 6 nH (half-bridge)
  • Operating junction temperature (TJmax): +175°C
  • High-accuracy RTD temperature sensor
  • AlSiC baseplate
  • AS9100 Aviation Quality Management System
  • Power overlay wire bondless technology
Applications
  • Generators
  • Traction inverters
  • Propulsion inverters
  • DC/DC converters
  • Power distribution

48 mm High-Power SiC Module Platform

ImageManufacturer Part NumberDescriptionConfigurationDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPriceView Details
MOSFET 2N-CH 1200V 475AGE12047BCA3MOSFET 2N-CH 1200V 475A2 N-Channel (Dual)1200V (1.2kV)475A1 - Marketplace$1,839.98View Details
MOSFET 2N-CH 1200V 475A MODULEGE12047CCA3MOSFET 2N-CH 1200V 475A MODULE2 N-Channel (Half Bridge)1200V (1.2kV)475A24 - Marketplace$1,839.98View Details
MOSFET 2N-CH 1700V 425A MODULEGE17042BCA3MOSFET 2N-CH 1700V 425A MODULE2 N-Channel (Dual)1700V (1.7kV)425A (Tc)1 - Marketplace$2,311.77View Details
MOSFET 2N-CH 1700V 425A MODULEGE17042CCA3MOSFET 2N-CH 1700V 425A MODULE2 N-Channel (Half Bridge)1700V (1.7kV)425A (Tc)12 - Marketplace$2,311.77View Details
Published: 2023-05-02