Name: SISH625DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH625DN-T1-GE3TR-ND
Price: 1.0234 EUR
Availability: InStock

cms-photo-disclaimer

SISH625DN-T1-GE3
cms-digikey-product-number	SISH625DN-T1-GE3TR-ND - Tape & Reel (TR) SISH625DN-T1-GE3CT-ND - Cut Tape (CT) SISH625DN-T1-GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SISH625DN-T1-GE3
cms-description	MOSFET P-CH 30V 17.3A/35A PPAK
cms-standard-lead-time	19 Weeks
cms-customer-reference
cms-detailed-description	P-Channel 30 V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	17.3A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	126 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4427 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH
Base Product Number	SISH625