Name: SIHD4N80E-GE3
Brand: Vishay Siliconix
SKU: SIHD4N80E-GE3-ND
Price: 1.9516 EUR
Availability: InStock

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SIHD4N80E-GE3
DigiKey Part Number	SIHD4N80E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD4N80E-GE3
Description	MOSFET N-CH 800V 4.3A DPAK
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 4.3A (Tc) 69W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet
EDA/CAD Models	SIHD4N80E-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	622 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	SIHD4

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