TO-263-3
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TO-263-3
TO-263-3

SIHB080N60E-GE3

DigiKey Part Number
742-SIHB080N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB080N60E-GE3
Description
E SERIES POWER MOSFET D2PAK (TO-
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 35A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
EDA/CAD Models
SIHB080N60E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2557 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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In-Stock: 1.564
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
14,51000 €4,51 €
502,39120 €119,56 €
1002,18630 €218,63 €
5002,09088 €1.045,44 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4,51000 €
Unit Price with VAT:5,36690 €