Name: SIA4265EDJ-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SIA4265EDJ-T1-GE3TR-ND
Price: 0.5831 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIA4265EDJ-T1-GE3
DigiKey Part Number	742-SIA4265EDJ-T1-GE3TR-ND - Tape & Reel (TR) 742-SIA4265EDJ-T1-GE3CT-ND - Cut Tape (CT) 742-SIA4265EDJ-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIA4265EDJ-T1-GE3
Description	P-CHANNEL 20-V (D-S) MOSFET POWE
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 7.8A (Ta), 9A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
Datasheet	Datasheet
EDA/CAD Models	SIA4265EDJ-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1180 pF @ 0 V
FET Feature	-
Power Dissipation (Max)	2.9W (Ta), 15.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6
Package / Case	PowerPAK® SC-70-6

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