Name: SI2312CDS-T1-BE3
Brand: Vishay Siliconix
SKU: 742-SI2312CDS-T1-BE3TR-ND
Price: 0.5474 EUR
Availability: InStock

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SI2312CDS-T1-BE3
cms-digikey-product-number	742-SI2312CDS-T1-BE3TR-ND - Tape & Reel (TR) 742-SI2312CDS-T1-BE3CT-ND - Cut Tape (CT) 742-SI2312CDS-T1-BE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SI2312CDS-T1-BE3
cms-description	N-CHANNEL 20-V (D-S) MOSFET
cms-standard-lead-time	19 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 20 V 5A (Ta), 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	865 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3