SI2307BDS-T1-E3 Vishay Siliconix | Discrete Semiconductor Products

cms-photo-disclaimer

SI2307BDS-T1-E3
cms-digikey-product-number	SI2307BDS-T1-E3TR-ND - Tape & Reel (TR) SI2307BDS-T1-E3CT-ND - Cut Tape (CT) SI2307BDS-T1-E3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SI2307BDS-T1-E3
cms-description	MOSFET P-CH 30V 2.5A SOT23-3
cms-customer-reference
cms-detailed-description	P-Channel 30 V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet
cms-eda-cad-models	SI2307BDS-T1-E3 Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	78mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2307