N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole I2PAK
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N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole I2PAK
IRFxxxxLPBF

IRFBE30LPBF

DigiKey Part Number
IRFBE30LPBF-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
IRFBE30LPBF
Description
MOSFET N-CH 800V 4.1A I2PAK
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole I2PAK
Datasheet
 Datasheet
EDA/CAD Models
IRFBE30LPBF Models
Product Attributes
Type
Description
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Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFBE30
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In-Stock: 968
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
13,26000 €3,26 €
501,64520 €82,26 €
1001,48820 €148,82 €
5001,21300 €606,50 €
1.0001,12459 €1.124,59 €
2.0001,05028 €2.100,56 €
5.0000,98969 €4.948,45 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3,26000 €
Unit Price with VAT:3,87940 €