TK100L60W,VQ
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK100L60W,VQ

DigiKey Part Number
TK100L60WVQ-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK100L60W,VQ
Description
MOSFET N-CH 600V 100A TO3P
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 100A (Tc) 797W (Tc) Through Hole TO-3P(L)
Datasheet
 Datasheet
EDA/CAD Models
TK100L60W,VQ Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
360 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
797W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P(L)
Package / Case
TO-3PL
Base Product Number
TK100L60
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 100
Check for Additional Incoming Stock
Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
127,81000 €27,81 €
1020,52500 €205,25 €
10018,52640 €1.852,64 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:27,81000 €
Unit Price with VAT:33,09390 €