Name: SSM6H19NU,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM6H19NULFTR-ND
Price: 0.5117 EUR
Availability: OutOfStock

Need Help?

Feedback

About DigiKey Marketplace Sell on DigiKey.com Careers Site Map Digital Solutions Newsroom

Help and Support Order Status Shipping Rates/Options Returns and Order Issues Legal Information

Chat (+49) 30 915 884 91 eu.support@digikey.com Co-Browse

Local Support: Theresienhöhe 11A 80339 München, Germany

SSM6H19NU,LF
DigiKey Part Number	SSM6H19NULFTR-ND - Tape & Reel (TR) SSM6H19NULFCT-ND - Cut Tape (CT) SSM6H19NULFDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	SSM6H19NU,LF
Description	MOSFET N-CH 40V 2A 6UDFN
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 40 V 2A (Ta) 1W (Ta) Surface Mount 6-UDFN (2x2)
Datasheet	Datasheet
EDA/CAD Models	SSM6H19NU,LF Models

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVII-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Rds On (Max) @ Id, Vgs	185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 4.2 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	6-UDFN (2x2)
Package / Case	6-UDFN Exposed Pad
Base Product Number	SSM6H19

Unit Price without VAT:	0,43000 €
Unit Price with VAT:	0,51170 €

SSM6H19NU,LF