Bipolar (BJT) Transistor NPN 600 V 1 A 1 W Through Hole MSTM
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2SC6010(T2MITUM,FM

DigiKey Part Number
2SC6010(T2MITUMFM-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
2SC6010(T2MITUM,FM
Description
TRANS NPN 600V 1A MSTM
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 600 V 1 A 1 W Through Hole MSTM
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Bulk
Part Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Vce Saturation (Max) @ Ib, Ic
1V @ 75mA, 600mA
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
MSTM
Base Product Number
2SC6010
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Obsolete
This product is no longer manufactured.
Non-Cancelable/Non-Returnable