STB25NM60N-1 is Obsolete and no longer manufactured.
Available Substitutes:

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Toshiba Semiconductor and Storage
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N-Channel 600 V 21A (Tc) 160W (Tc) Through Hole I2PAK
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB25NM60N-1

DigiKey Part Number
497-5730-ND
Manufacturer
Manufacturer Product Number
STB25NM60N-1
Description
MOSFET N-CH 600V 21A I2PAK
Customer Reference
Detailed Description
N-Channel 600 V 21A (Tc) 160W (Tc) Through Hole I2PAK
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 10 V
Series
Vgs (Max)
±25V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 50 V
Part Status
Obsolete
Power Dissipation (Max)
160W (Tc)
FET Type
Operating Temperature
150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
I2PAK
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
160mOhm @ 10.5A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (4)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IXFA22N65X2IXYS4.207238-IXFA22N65X2-ND6,65000 €Similar
SIHB22N60AE-GE3Vishay Siliconix0SIHB22N60AE-GE3-ND1,81799 €Similar
SIHB24N65E-GE3Vishay Siliconix1.416742-SIHB24N65E-GE3-ND6,02000 €Similar
TK20G60W,RVQToshiba Semiconductor and Storage52TK20G60WRVQCT-ND3,82000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes