SCTW40N120G2V STMicroelectronics | Single FETs, MOSFETs

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SCTW40N120G2V
DigiKey Part Number	497-SCTW40N120G2V-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTW40N120G2V
Description	SILICON CARBIDE POWER MOSFET 120
Customer Reference
Detailed Description	N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Datasheet	Datasheet
EDA/CAD Models	SCTW40N120G2V Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.9V @ 1mA
Mfr STMicroelectronics	Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
Packaging Tube	Vgs (Max) +22V, -10V
Part Status Obsolete	Input Capacitance (Ciss) (Max) @ Vds 1233 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 278W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 200°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 36A (Tc)	Supplier Device Package HiP247™
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-3
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 18V	Base Product Number SCTW40

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Substitutes (1)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
MSC080SMA120B	Microchip Technology	128	MSC080SMA120B-ND	10,88000 €	Similar

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Tube

Manufacturers Standard Package

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Unit Price without VAT:	15,12000 €
Unit Price with VAT:	17,99280 €

SCTW40N120G2V