N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
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SCTW40N120G2V

DigiKey Part Number
497-SCTW40N120G2V-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCTW40N120G2V
Description
SILICON CARBIDE POWER MOSFET 120
Customer Reference
Detailed Description
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Datasheet
 Datasheet
EDA/CAD Models
SCTW40N120G2V Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1233 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCTW40
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In-Stock: 517
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
114,30000 €14,30 €
308,84433 €265,33 €
1207,67008 €920,41 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:14,30000 €
Unit Price with VAT:17,01700 €