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N-Channel 1200 V 19A (Tc) 163W (Tc) Through Hole TO-247AD
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S3M0160120D

DigiKey Part Number
1655-S3M0160120D-ND
Manufacturer
SMC Diode Solutions
Manufacturer Product Number
S3M0160120D
Description
SILICON CARBIDE MOSFET, 160MOHM,
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 19A (Tc) 163W (Tc) Through Hole TO-247AD
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SMC Diode Solutions
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
208mOhm @ 7.5A, 18V
Vgs(th) (Max) @ Id
4V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 18 V
Vgs (Max)
+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds
548 pF @ 1200 V
FET Feature
-
Power Dissipation (Max)
163W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
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In-Stock: 300
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
14,68000 €4,68 €
103,12100 €31,21 €
3001,96170 €588,51 €
6001,82392 €1.094,35 €
1.2001,76494 €2.117,93 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4,68000 €
Unit Price with VAT:5,56920 €