N-Channel 1200 V 21A (Tc) 156W (Tc) Through Hole TO-247-4
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S2M0120120K

DigiKey Part Number
1655-S2M0120120K-ND
Manufacturer
SMC Diode Solutions
Manufacturer Product Number
S2M0120120K
Description
MOSFET SILICON CARBIDE SIC 1200V
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 21A (Tc) 156W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SMC Diode Solutions
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
150mOhm @ 13.3A, 20V
Vgs(th) (Max) @ Id
4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs
29.6 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
652 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 295
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
15,42000 €5,42 €
103,64300 €36,43 €
3002,32093 €696,28 €
6002,16392 €1.298,35 €
1.2002,14892 €2.578,70 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5,42000 €
Unit Price with VAT:6,44980 €