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S2M0025120F

DigiKey Part Number
1655-S2M0025120F-ND
Manufacturer
SMC Diode Solutions
Manufacturer Product Number
S2M0025120F
Description
MOSFETS SILICON CARBIDES 1200V 2
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 47A (Tc) 190W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SMC Diode Solutions
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
4054 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 300
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
115,65000 €15,65 €
309,74733 €292,42 €
1208,60383 €1.032,46 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:15,65000 €
Unit Price with VAT:18,62350 €