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N-Channel 650 V 55A (Tc) 307W (Tc) Through Hole TO-247AD
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S1M0060065D

DigiKey Part Number
1655-S1M0060065D-ND
Manufacturer
SMC Diode Solutions
Manufacturer Product Number
S1M0060065D
Description
SILICON CARBIDE MOSFET, 60MOHM,6
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 55A (Tc) 307W (Tc) Through Hole TO-247AD
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SMC Diode Solutions
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
79Ohm @ 15A, 18V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
62.5 nC @ 18 V
Vgs (Max)
+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1660 pF @ 650 V
FET Feature
-
Power Dissipation (Max)
307W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
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In-Stock: 300
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
16,40000 €6,40 €
104,33900 €43,39 €
3002,80757 €842,27 €
6002,68130 €1.608,78 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:6,40000 €
Unit Price with VAT:7,61600 €