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N-Channel 650 V 48A (Tc) 238W (Tc) Surface Mount TO-263-7
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N-Channel 650 V 48A (Tc) 238W (Tc) Surface Mount TO-263-7
TO-263-7

S1M0060065B

DigiKey Part Number
1655-S1M0060065B-ND
Manufacturer
SMC Diode Solutions
Manufacturer Product Number
S1M0060065B
Description
SILICON CARBIDE MOSFET, 60MOHM,6
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 48A (Tc) 238W (Tc) Surface Mount TO-263-7
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SMC Diode Solutions
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
79Ohm @ 15A, 18V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
62.5 nC @ 18 V
Vgs (Max)
+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1660 pF @ 650 V
FET Feature
-
Power Dissipation (Max)
238W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
16,14000 €6,14 €
104,15400 €41,54 €
3502,63611 €922,64 €
7002,53811 €1.776,68 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:6,14000 €
Unit Price with VAT:7,30660 €