N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-3
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GP2T080A120U

DigiKey Part Number
1560-GP2T080A120U-ND
Manufacturer
SemiQ
Manufacturer Product Number
GP2T080A120U
Description
SIC MOSFET 1200V 80M TO-247-3L
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SemiQ
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1377 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
GP2T080A
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In-Stock: 637
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
16,64000 €6,64 €
303,82300 €114,69 €
1203,20350 €384,42 €
5102,74951 €1.402,25 €
1.0202,58392 €2.635,60 €
2.0102,57104 €5.167,79 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:6,64000 €
Unit Price with VAT:7,90160 €