N-Channel 500 V 11.6A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
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SPI12N50C3IN

DigiKey Part Number
2156-SPI12N50C3IN-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
SPI12N50C3IN
Description
N-CHANNEL POWER MOSFET
Customer Reference
Detailed Description
N-Channel 500 V 11.6A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Infineon Technologies
Series
CoolMOS™
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
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In-Stock: 928
Non-Cancelable/Non-Returnable
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Will ship in approximately 10 days from Rochester Electronics LLC
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Bulk:928
Quantity
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
1821,42000 €258,44 €
Unit Price without VAT:1,42000 €
Unit Price with VAT:1,68980 €