N-Channel 200 V 18A (Tc) 125W (Tc) Surface Mount TO-263AB
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RF1S640SM

DigiKey Part Number
2156-RF1S640SM-ND
Manufacturer
Harris Corporation
Manufacturer Product Number
RF1S640SM
Description
MOSFET N-CH 200V 18A TO263AB
Customer Reference
Detailed Description
N-Channel 200 V 18A (Tc) 125W (Tc) Surface Mount TO-263AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Harris Corporation
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1275 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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In-Stock: 665
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 10 days from Rochester Electronics LLC
A separate 77,34 € flat rate shipping fee will apply
In an effort to support the research and development needs of all customers, we have implemented a maximum purchase limit for this product.
The limit may be purchased every 30 days and any amount over these limits will result in backorder or cancellation of this product.
MAXIMUM PURCHASE LIMIT
Bulk:665
Quantity
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
962,67646 €256,94 €
Unit Price without VAT:2,67646 €
Unit Price with VAT:3,18499 €