IPP80N06S2L07AKSA2 is Obsolete and no longer manufactured.
Available Substitutes:

MFR Recommended


Infineon Technologies
In Stock: 376
Unit Price: 4,52000 €
Datasheet

Similar


IXYS
In Stock: 14
Unit Price: 4,52000 €
Datasheet

Similar


Toshiba Semiconductor and Storage
In Stock: 17
Unit Price: 2,18000 €
Datasheet
N-Channel 55 V 80A (Tc) 210W (Tc) Through Hole PG-TO220-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP80N06S2L07AKSA2

DigiKey Part Number
IPP80N06S2L07AKSA2-ND
Manufacturer
Manufacturer Product Number
IPP80N06S2L07AKSA2
Description
MOSFET N-CH 55V 80A TO220-3
Customer Reference
Detailed Description
N-Channel 55 V 80A (Tc) 210W (Tc) Through Hole PG-TO220-3-1
Datasheet
 Datasheet
Product Attributes
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Category
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Mfr
Vgs (Max)
±20V
Series
Input Capacitance (Ciss) (Max) @ Vds
3160 pF @ 25 V
Packaging
Tube
Power Dissipation (Max)
210W (Tc)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
Grade
Automotive
Technology
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
55 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
Rds On (Max) @ Id, Vgs
7mOhm @ 60A, 10V
Base Product Number
Vgs(th) (Max) @ Id
2V @ 150µA
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (3)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IPP100N06S2L05AKSA2Infineon Technologies376IPP100N06S2L05AKSA2-ND4,52000 €MFR Recommended
IXTP120N075T2IXYS14IXTP120N075T2-ND4,52000 €Similar
TK4R3E06PL,S1XToshiba Semiconductor and Storage17TK4R3E06PLS1X-ND2,18000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes