Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 60 V 1 A 750 mW Through Hole TO-92
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AR1L3N-AZ

DigiKey Part Number
2156-AR1L3N-AZ-ND
Manufacturer
Renesas Electronics Corporation
Manufacturer Product Number
AR1L3N-AZ
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 60 V 1 A 750 mW Through Hole TO-92
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Manufacturer
Renesas Electronics Corporation
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Resistors Included
R1 and R2
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
750 mW
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
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In-Stock: 6.446
Non-Cancelable/Non-Returnable
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Will ship in approximately 10 days from Rochester Electronics LLC
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Bulk:6446
Quantity
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
5030,50994 €256,50 €
Unit Price without VAT:0,50994 €
Unit Price with VAT:0,60683 €