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2SJ635-TL-E

DigiKey Part Number
2156-2SJ635-TL-E-ND
Manufacturer
Manufacturer Product Number
2SJ635-TL-E
Description
2SJ635 - P-CHANNEL SILICON MOSFE
Customer Reference
Detailed Description
P-Channel 60 V 12A (Ta) 1W (Ta), 30W (Tc) Through Hole TP
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
2.6V @ 1mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Packaging
Bulk
Vgs (Max)
±20V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 20 V
FET Type
Power Dissipation (Max)
1W (Ta), 30W (Tc)
Technology
Operating Temperature
150°C
Drain to Source Voltage (Vdss)
60 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TP
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Package / Case
Rds On (Max) @ Id, Vgs
60mOhm @ 6A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 2.780
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 10 days from Rochester Electronics LLC
A separate 77,34 € flat rate shipping fee will apply
Maximum purchase limit
To support all customers' research and development needs, this product has a maximum purchase limit. This limit may be purchased every 30 days and any orders above the limit may be cancelled.
Bulk:2780
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
5190,49295 €255,84 €
Unit Price without VAT:0,49295 €
Unit Price with VAT:0,58661 €