Bipolar (BJT) Transistor NPN - Darlington 50 V 1.5 A 120MHz 900 mW Through Hole 3-MP
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2SD1153-AE

DigiKey Part Number
2156-2SD1153-AE-ND
Manufacturer
onsemi
Manufacturer Product Number
2SD1153-AE
Description
TRANS NPN DARL 50V 1.5A 3-MP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 50 V 1.5 A 120MHz 900 mW Through Hole 3-MP
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
1.5 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
4000 @ 500mA, 2V
Power - Max
900 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
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In-Stock: 5.772
Non-Cancelable/Non-Returnable
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Will ship in approximately 10 days from Rochester Electronics LLC
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MAXIMUM PURCHASE LIMIT
Bulk:5772
Quantity
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
5680,45613 €259,08 €
Unit Price without VAT:0,45613 €
Unit Price with VAT:0,54279 €