Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
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UNR42100RA

DigiKey Part Number
UNR42100RATB-ND - Tape & Box (TB)
Manufacturer
Manufacturer Product Number
UNR42100RA
Description
TRANS PREBIAS NPN 50V NS-B1
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
Datasheet
 Datasheet
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 5mA, 10V
Manufacturer
Panasonic Industry
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Packaging
Tape & Box (TB)
Current - Collector Cutoff (Max)
500nA
Part Status
Obsolete
Frequency - Transition
150 MHz
Transistor Type
NPN - Pre-Biased
Power - Max
300 mW
Current - Collector (Ic) (Max)
100 mA
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
50 V
Package / Case
3-SIP
Resistors Included
R1 Only
Supplier Device Package
NS-B1
Resistor - Base (R1)
47 kOhms
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.