UP04111G0L is Obsolete and no longer manufactured.
Available Substitutes:

Similar


onsemi
In Stock: 8.000
Unit Price: 0,11899 €
Datasheet

Similar


Toshiba Semiconductor and Storage
In Stock: 3.889
Unit Price: 0,20000 €
Datasheet
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 80MHz 125mW Surface Mount SSMini6-F2
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

UP04111G0L

DigiKey Part Number
UP04111G0LTR-ND - Tape & Reel (TR)
Manufacturer
Manufacturer Product Number
UP04111G0L
Description
TRANS PREBIAS 2PNP SSMINI6-F2
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 80MHz 125mW Surface Mount SSMini6-F2
Datasheet
 Datasheet
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Manufacturer
Panasonic Industry
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Packaging
Tape & Reel (TR)
Current - Collector Cutoff (Max)
500nA
Part Status
Obsolete
Frequency - Transition
80MHz
Transistor Type
2 PNP - Pre-Biased (Dual)
Power - Max
125mW
Current - Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50V
Package / Case
SOT-563, SOT-666
Resistor - Base (R1)
10kOhms
Supplier Device Package
SSMini6-F2
Resistor - Emitter Base (R2)
10kOhms
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
NSVBA114YDXV6T1Gonsemi8.000NSVBA114YDXV6T1G-ND0,11899 €Similar
RN2902FE,LF(CTToshiba Semiconductor and Storage3.889RN2902FELF(CTCT-ND0,20000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes